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PSM-Check and Create

The Sub-Wavelength Gap — the gap between IC feature sizes and the wavelength of the light used to pattern them — emerged at the 0.18 micron process node and widened at 0.13µ making advanced mask synthesis techniques a necessity. At 0.13µ and below, optical distortions and other lithographic effects cause larger features to deform and smaller features to disappear altogether. The resulting variations can significantly decrease performance or lead to yield loss. Mask synthesis has evolved as the solution to this problem. Mask synthesis includes resolution enhancement techniques (RET) such as optical proximity correction (OPC) and phase shift masks (PSM), and makes it possible to print features that are considerably smaller than the wavelength of light.


Industrial R&D

Red Hat Certifications

This product has been certified to run on the following Red Hat products and technologies:

Target Product Level
Red Hat Enterprise Linux 6.x Self-Certified